radiation hardened power mosfet thru-hole (mo-036ab) 04/15/02 www.irf.com 1 for footnotes refer to the last page mo-036ab irhg597110 100v, quad p-channel rad-hard ? hexfet ? technology international rectifiers rad-hard tm hexfet ? mosfet technology provides high performance power mosfets for space applications. this technology has over a decade of proven performance and reliability in satellite applica- tions. these devices have been characterized for both total dose and single event effects (see). the combina- tion of low r ds(on) and low gate charge reduces the power losses in switching applications such as dc to dc con- verters and motor control. these devices retain all of the well established advantages of mosfets such as voltage control, fast switching, ease of paralleling and tempera- ture stability of electrical parameters. features: single event effect (see) hardened low r ds(on) low total gate charge proton tolerant simple drive requirements ease of paralleling hermetically sealed ceramic package light weight product summary part number radiation level r ds(on) i d irhg597110 100k rads (si) 0.96 -0.96a irhg593110 300k rads (si) 0.98 -0.96a absolute maximum ratings ( per die) parameter units i d @ v gs = -12v, t c = 25c continuous drain current -0.96 i d @ v gs = -12v, t c = 100c continuous drain current -0.6 i dm pulsed drain current ? -3.84 p d @ t c = 25c max. power dissipation 1.4 w linear derating factor 0.011 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy ? 200 mj i ar avalanche current ? -0.96 a e ar repetitive avalanche energy ? 0.14 mj dv/dt p eak diode recovery dv/dt ? 7.1 v/ns t j operating junction -55 to 150 t stg storage temperature range lead temperature 300 (0.63 in./1.6mm from case for 10s) weight 1.3 (typical) g pre-irradiation o c a pd - 94431 downloaded from: http:///
irhg597110 pre-irradiation 2 www.irf.com for footnotes refer to the last page source-drain diode ratings and characteristics (per die) parameter min typ max units test conditions i s continuous source current (body diode) -0.96 i sm pulse source current (body diode) ? -3.84 v sd diode forward voltage -5.0 v t j = 25c, i s = -0.96a, v gs = 0v ? t rr reverse recovery time 86 ns t j = 25c, i f = -0.96a, di/dt -100a/ s q rr reverse recovery charge 240 nc v dd -25v ? t on forward turn-on time intrinsic turn-on time is negligible. turn-on speed is substantially controlled by l s + l d . a thermal resistance (per die) parameter min typ max units test conditions r thja junction-to-ambient 90 t ypical socket mount c/w electrical characteristics for each p-channel device @ tj = 25c (unless otherwise specified) parameter min typ max units test conditions bv dss drain-to-source breakdown voltage -100 v v gs = 0v, i d = -1.0ma ? bv dss / ? t j temperature coefficient of breakdown -0.14 v/c reference to 25c, i d = -1.0ma voltage r ds(on) static drain-to-source on-state 0.96 v gs = -12v, i d = -0.6a resistance v gs(th) gate threshold voltage -2.0 -4.0 v v ds = v gs , i d = -1.0ma g fs forward transconductance 1.1 s ( )v ds > -15v, i ds = -0.6a ? i dss zero gate voltage drain current -10 v ds = -80v, v gs = 0v -25 v ds = -80v, v gs = 0v, t j =125c i gss gate-to-source leakage forward -100 v gs = - 20v i gss gate-to-source leakage reverse 100 v gs = 20v q g total gate charge 13.4 v gs = -12v, i d = -0.96a, q gs gate-to-source charge 3.7 nc v ds = -50v q gd gate-to-drain (miller) charge 3.0 t d (on) turn-on delay time 21 v dd = -50v, i d = -0.96a, t r rise time 17 v gs = -12v, r g = 7.5 t d (off) turn-off delay time 40 t f fall time 90 l s + l d total inductance 10 measured from drain lead (6mm /0.25in. from package) to source lead (6mm /0.25in. from package) with source wires internally bonded from source pin to drain pad c iss input capacitance 390 v gs = 0v, v ds = 25v c oss output capacitance 100 pf f = 1.0mhz c rss reverse transfer capacitance 7.0 na ? nh ns a note: corresponding spice and saber models are available on the g&s website. downloaded from: http:///
www.irf.com 3 pre-irradiation irhg597110 international rectifier radiation hardened mosfets are tested to verify their radiation hardness capability. the hardness assurance program at international rectifier is comprised of two radiation environments. every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the to-3 package. both pre- and post-irradiation performance are tested and specified using the same drive circuitry and testconditions in order to provide a direct comparison. international rectifier radiation hardened mosfets have been characterized in heavy ion environment for single event effects (see). single event effects characterization is illustrated in fig. a and table 2. table 1. electrical characteristics @ tj = 25c, post total dose irradiation ?? (per die) parameter 100k rads(si) 1 300k rads (si) 2 units test conditions min max min max bv dss drain-to-source breakdown voltage -100 -100 v v gs = 0v, i d = -1.0ma v gs(th) gate threshold voltage - 2.0 -4.0 - 2.0 -4.0 v gs = v ds , i d = -1.0ma i gss gate-to-source leakage forward -100 -100 na v gs = -20v i gss gate-to-source leakage reverse 100 100 v gs = 20 v i dss zero gate voltage drain current -10 -10 a v ds = -80v, v gs =0v r ds(on) static drain-to-source ? 0.916 0.936 v gs = -12v, i d = -0.6a on-state resistance (to-39) r ds(on) static drain-to-source ? 0.96 0.98 v gs = -12v, i d = -0.6a on-state resistance (mo-036ab) 1. part number irhg5971102. part number irhg593110 v sd diode forward voltage ? -3.5 -3.5 v v gs = 0v, i s = -0.96a fig a. single event effect, safe operating area for footnotes refer to the last page table 2. single event effect safe operating area (per die) -120 -100 -80 -60 -40 -20 0 0 5 10 15 20 vgs vds br i au ion let energy range v ds (v) mev/(mg/cm 2 )) (mev) (m) @v gs =0v @v gs =5v @v gs =10v @v gs =15v @v gs =17.5v br 37.3 285 36.8 -100 -100 -100 -100 -100 i 59.9 344 32.7 -100 -100 -100 -100 -75 au 82.3 351 28.5 -100 -100 -100 -30 @v gs =20v -100 -25 downloaded from: http:///
irhg597110 pre-irradiation 4 www.irf.com fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 0.1 1 10 0.1 1 10 100 20s pulse width t = 25 c j top bottom vgs -15v -12v -10v -9.0v -8.0v -7.0v -6.0v -5.0v -v , drain-to-source voltage (v) -i , drain-to-source current (a) ds d -5.0v 0.1 1 10 0.1 1 10 100 20s pulse width t = 150 c j top bottom vgs -15v -12v -10v -9.0v -8.0v -7.0v -6.0v -5.0v -v , drain-to-source voltage (v) -i , drain-to-source current (a) ds d -5.0v 1 10 5.0 5.2 5.4 5.6 5.8 v = -50v 20s pulse width ds -v , gate-to-source voltage (v) -i , drain-to-source current (a) gs d t = 25 c j t = 150 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d -12v -0.96a downloaded from: http:///
www.irf.com 5 pre-irradiation irhg597110 fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 1 10 100 0 100 200 300 400 500 600 -v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss gs gd , ds rss gd oss ds gd c rss c oss c iss 0 2 4 6 8 10 12 0 4 8 12 16 20 q , total gate charge (nc) -v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 -0.96a v = -20v ds v = -50v ds v = -80v ds 0.1 1 10 1.0 2.0 3.0 4.0 5.0 -v ,source-to-drain voltage (v) -i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j 1 10 100 1000 -v ds , drain-tosource voltage (v) 0.1 1 10 -i d , drain-to-source current (a) tc = 25 c tj = 150 c single pulse 1ms 10ms operation in this area limited by r ds (on) downloaded from: http:///
irhg597110 pre-irradiation 6 www.irf.com fig 11. maximum effective transient thermal impedance, junction-to-ambient fig 9. maximum drain current vs. case temperature fig 10a. switching time test circuit fig 10b. switching time waveforms v ds pulse width 1 s duty factor 0.1 % r d v gs v dd r g d.u.t. + - v ds 90% 10% v gs t d(on) t r t d(off) t f v gs 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 100 1000 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectan g ular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 t , case temperature ( c) -i , drain current (a) c d downloaded from: http:///
www.irf.com 7 pre-irradiation irhg597110 fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v ( br ) dss i as r g i as 0.01 t p d.u.t l v ds v dd driver a 15v -20v fig 13b. gate charge test circuit fig 13a. basic gate charge waveform q g q gs q gd v g charge -12v d.u.t. v ds i d i g -3ma v gs .3 f 50k .2 f 12v current regulator same type as d.u.t. current sampling resistors + - -12v . v gs 25 50 75 100 125 150 0 100 200 300 400 500 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom -0.4a -0.6a -0.96a downloaded from: http:///
irhg597110 pre-irradiation 8 www.irf.com ? total dose irradiation with v gs bias. -12 volt v gs applied and v ds = 0 during irradiation per mil-std-750, method 1019, condition a ? total dose irradiation with v ds bias. -80 volt v ds applied and v gs = 0 during irradiation per mll-std-750, method 1019, condition a ? repetitive rating; pulse width limited by maximum junction temperature. ? v dd = - 25v, starting t j = 25 c, l= 430mh, peak i l = - 0.96a, v gs =-12v ? i sd - 0.96a, di/dt - 290a/ s, v dd -100v, t j 150 c case outline and dimensions mo-036ab footnotes: ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . data and specifications subject to change without notice. 04/02 ? pulse width 300 s; duty cycle 2% downloaded from: http:///
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